Radiation Hardened Quad 2-Input NAND Gate

Description The Intersil HCS00MS is a Radiation Hardened Quad 2-Input NAND Gate. A high on both inputs forces the output to a Low state. The HCS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Fa

文件：101.63 Kbytes 页数：8 Pages

Intersil

Radiation Hardened Quad 2-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cos

文件：363.6 Kbytes 页数：8 Pages

RENESAS

瑞萨

Radiation Hardened Quad 2-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cos

文件：363.6 Kbytes 页数：8 Pages

RENESAS

瑞萨

Radiation Hardened Quad 2-Input NAND Gate

Description The Intersil HCS00MS is a Radiation Hardened Quad 2-Input NAND Gate. A high on both inputs forces the output to a Low state. The HCS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Fa

文件：101.63 Kbytes 页数：8 Pages

Intersil