HAT2080T

Silicon N Channel MOS FET High Speed Power Switching

HAT2080T-EL-E

Silicon N Channel MOS FET High Speed Power Switching

HDC2080

LowPowerHumidityandTemperatureDigitalSensor

HDC2080

HDC3120High-Accuracy(0.5%RH,0.2°C)AnalogHumidityandTemperatureSensor,WithLowLong-TermDrift(0.19%RH/yr),and4sRH%Response

1Features •Relativehumidity(RH)sensor: –Operatingrange:0%to100%RH –Accuracy:±0.5%RHtypical –Long-termdrift:0.19%RH/yr –RatiometricAnalogOutputtorepresentRH •Temperaturesensor: –Operatingrange:–40°Cto125°C –Accuracy:±0.2°Ctypical –Ratiometri

HDC2080

HDC3120-Q1AutomotiveHigh-Accuracy(0.5%RH,0.2°C)AnalogHumidityandTemperatureSensor,WithLowLong-TermDrift(0.19%RH/yr),and4sRH%Response

1Features •Relativehumidity(RH)sensor: –Operatingrange:0%to100%RH –Accuracy:±0.5%RHtypical –Long-termdrift:0.19%RH/yr –RatiometricAnalogOutputtorepresentRH •Temperaturesensor: –Operatingrange:–40°Cto125°C –Accuracy:±0.2°Ctypical –Ratiometri

HDC2080DMBR

LowPowerHumidityandTemperatureDigitalSensor

HDC2080DMBT

LowPowerHumidityandTemperatureDigitalSensor

HF2080A-UP

Single-phase2-line250VAC

HF2080A-UPF

Single-phasetwo-wire250VAC

HX2080

RICMOS??SOIGATEARRAYS

GENERALDESCRIPTION TheHX2000andHX2000rgatearraysareperformanceorientedsea-of-transistorarrays,fabricatedonHoneywell’sRICMOS™IVSiliconOnInsulator(SOI)process.TheHX2000arraysarefor5Vdesignsonly.TheHX2000rarrayssupport5Vand3.3Voperation.Highdensityisachieved