首页 >HADC574ZAMJ>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Two-WireHallEffectSensorFamily | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
Two-WireHall-EffectSensorFamily Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe | MICRONAS Micronas | MICRONAS | ||
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
Octal3-StateNoninvertingDFlip-Flop | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
OctalD-typeflip-flop;positiveedge-trigger;3-state | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
HIGH-SPEEDCOMSLOGICOCTALD-TYPEFLIP-FLOP3-STATE,POSITIVE-EDGERIGGERED | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SPT |
CDIP金 |
92+ |
10 |
全新原装进口自己库存优势 |
询价 | ||
SPT |
17+ |
CDIP金 |
9988 |
只做原装进口,自己库存 |
询价 | ||
SPT |
22+ |
DIP |
5000 |
进口原装!现货库存 |
询价 | ||
SPT |
23+ |
CDIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
SPT |
23+ |
CDIP金 |
20000 |
全新原装假一赔十 |
询价 | ||
SPT |
2021+ |
DIP |
1600 |
自家库存,百分之百原装 |
询价 | ||
SPT |
22+23+ |
DIP |
69242 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
SPT |
21+ |
DIP |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
ADI |
专业铁帽 |
CDIP |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
SPT |
2020+ |
CDIP28 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
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