首页 >H7N1004DS-E>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=25mΩtyp. •Lowdrivecurrent •Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features •Lowon-resistance RDS(on)=25mΩtyp. •Lowdrivecurrent •Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features •Lowon-resistance RDS(on)=25mΩtyp. •Lowdrivecurrent •Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features •Lowon-resistance RDS(on)=25mΩtyp. •Lowdrivecurrent •Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features •Lowon-resistance RDS(on)=25mΩtyp. •Lowdrivecurrent •Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigH-SpeedPowerSwitching Features Lowon-resistance RDS(on)=25mΩtyp. Lowdrivecurrent Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigH-SpeedPowerSwitching Features •Lowon-resistance •RDS(on)=25mΩtyp. •Lowdrivecurrent •Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features •Lowon-resistance •RDS(on)=25mΩtyp. •Lowdrivecurrent •Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features •Lowon-resistance •RDS(on)=25mΩtyp. •Lowdrivecurrent •Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
PowerMOSFETsandIGBTforPDP
| RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features •Lowon-resistance •RDS(on)=25mΩtyp. •Lowdrivecurrent •Availablefor4.5Vgatedrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
H7N1004DS-E
- 制造商：
Renesas Electronics Corporation
- 功能描述：
Bulk
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2023+ |
null |
8156 |
专注配单,只做原装进口现货 |
询价 | ||
RENESAS |
2023+ |
null |
8156 |
专注配单,只做原装进口现货 |
询价 | ||
RENESAS/瑞萨 |
22+21+ |
TO-252 |
12000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-252 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
TO-252 |
79999 |
询价 | |||
RENESAS/瑞萨 |
新年份 |
TO-252 |
33288 |
原装正品现货,实单带TP来谈! |
询价 | ||
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
R |
23+ |
TO-252 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
VBsemi/台湾微碧 |
21+ |
TO-252 |
3026 |
原装现货假一赔十 |
询价 |
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