首页 >H5TC4G63AFR-PBA>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
H5TC4G63AFR-PBA | 4Gb DDR3L SDRAM | HynixHynix Semiconductor SK海力士海力士半导体 | ||
4GbDDR3LSDRAM | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAM | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.35V+0.100/-0.067V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alla | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4GbDDR3LSDRAM | HynixHynix Semiconductor SK海力士海力士半导体 |
详细参数
- 型号:
H5TC4G63AFR-PBA
- 制造商:
HYNIX
- 制造商全称:
Hynix Semiconductor
- 功能描述:
4Gb DDR3L SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SKHYNIX |
2016+ |
BGA |
4800 |
全新原装现货,只售原装,假一赔十! |
询价 | ||
HYNIX/海力士 |
20+ |
FBGA96 |
16000 |
原装正品公司现货 |
询价 | ||
SK-HYNIX |
23+ |
BGA |
40037 |
HYNIX原装存储芯片-诚信为本 |
询价 | ||
HYNIX |
13+ |
FBGA |
786 |
原包原装现货,专注ARM内存闪存等芯片 |
询价 | ||
HYNIX内存专卖≡ |
1321+ROHS全新 |
BGA优势特价 |
21868 |
原装现货在线咨询样品※技术支持专业电子元器件授权 |
询价 | ||
SKHYNIX |
2020/原装正品 |
BGA |
13000 |
大量现货,免费拿样。 |
询价 | ||
SKHYNIX |
23+ |
BGA |
12500 |
代理授权直销,原装现货,假一罚十,长期稳定供应,特 |
询价 | ||
SKHYNIX |
22+23+ |
BGA |
13397 |
绝对原装正品全新进口深圳现货 |
询价 | ||
SKHYNIX |
2022+ |
FBGA |
15680 |
原厂原标 原盒现货 诚信经营 终生质保 |
询价 | ||
SKHYNIX |
21+ |
BGA |
10000 |
全新原装 公司现货 价优 |
询价 |
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