H5N5004PL-E中文资料下载供应价格瑞萨-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
H5N5004PL-E	文件：55.32 Kbytes Page：4 Pages	Silicon N Channel MOS FET High Speed Power Switching	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
H5N5004PL-E0-E	文件：250.85 Kbytes Page：8 Pages	500V - 50A - MOS FET High Speed Power Switching Features •Lowon-resistance RDS(on)=0.09Ωtyp.(atID=25A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching •Lowgatecharge •Avalancheratings •Built-infastrecoverydiode:trr=190nstyp •Qualitygrade:Standard	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
H5N5004PL-E0-E_15	文件：138.26 Kbytes Page：7 Pages	500V - 50A - MOS FET High Speed Power Switching	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
H5N5004PL	文件：55.32 Kbytes Page：4 Pages	SiliconNChannelMOSFETHighSpeedPowerSwitching	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
H5N5004PL	文件：65.48 Kbytes Page：5 Pages	SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance:RDS(on)=0.09Ωtyp. •Lowleakagecurrent:IDSS=10µAmax(atVDS=500V) •Highspeedswitching:tf=280nstyp(atVGS=10V,VDD=250V,ID=25A) •Lowgatecharge:Qg=220nCtyp(atVDD=400V,VGS=10V,ID=50A) •Avalancherati	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

更多H5N5004PL-E供应商更新时间2025-5-18 9:00:00