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H4110RBDA

包装:卷带(TR) 封装/外壳:轴向 类别:电阻器 通孔式电阻器 描述:RES 110 OHM 0.1% 1/2W AXIAL

TEConnectivityPassiveProductTE Connectivity Passive Product

TE Connectivity Passive ProductTE ConnectivityPassiveProduct

HM4110

100VDS竊뤒?5VGS竊?70A(ID)N-ChannelEnhancementModeMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM4110T

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMS4110T

N-ChannelSuperTrenchPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HO-NP-4110

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

莱姆电子莱姆(LEM)集团

HO-P-4110

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

莱姆电子莱姆(LEM)集团

IIRFB4110

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRFB4110G

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRFI4110G

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRFP4110

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB4110

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB4110

100VN-ChannelMOSFET

Benefits *ImprovedGate,AvalancheandDynamicdv/dt Ruggedness *FullyCharacterizedCapacitanceandAvalanche SOA *EnhancedbodydiodedV/dtanddI/dtCapability *LeadFree *RoHSCompliant,Halogen-Free *VDS(V)=100V *ID=120A(VGS=10V) *RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

IRFB4110

100VN-ChannelMOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dt Ruggedness FullyCharacterizedCapacitanceandAvalanche SOA Enhancedbod

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRFB4110G

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB4110GPBF

HEXFETPowerMOSFET

Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA EnhancedbodydiodedV/dtanddI/dtCapability Lead-Free Halogen-Free Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupp

IRF

International Rectifier

IRFB4110PBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ●ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ●FullyCharacterizedCapacitanceandAvalanche SOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSw

IRF

International Rectifier

IRFB4110PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFB4110QPBF

HEXFETPowerMOSFET

Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA EnhancedbodydiodedV/dtanddI/dtCapability 175°COperatingTemperature Automotive[Q101]Qualified Applications HighEfficiencySynchronousRectificationinS

IRF

International Rectifier

IRFI4110G

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFI4110GPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

产品属性

  • 产品编号:

    H4110RBDA

  • 制造商:

    TE Connectivity Passive Product

  • 类别:

    电阻器 > 通孔式电阻器

  • 系列:

    Holco, Holsworthy

  • 包装:

    卷带(TR)

  • 容差:

    ±0.1%

  • 功率 (W):

    0.5W,1/2W

  • 成分:

    金属薄膜

  • 特性:

    脉冲耐受

  • 温度系数:

    ±25ppm/°C

  • 工作温度:

    -55°C ~ 155°C

  • 封装/外壳:

    轴向

  • 供应商器件封装:

    轴向

  • 大小 / 尺寸:

    0.146" 直径 x 0.394" 长(3.70mm x 10.00mm)

  • 描述:

    RES 110 OHM 0.1% 1/2W AXIAL

供应商型号品牌批号封装库存备注价格
TE
23+
NA
100
通孔式电阻器
询价
HRS/广濑
2420+
/
320680
一级代理,原装正品!
询价
24+
N/A
53000
一级代理-主营优势-实惠价格-不悔选择
询价
更多H4110RBDA供应商 更新时间2024-10-31 15:02:00