零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
PrivacyMaskFunction | A1PROSA1 PROs co., Ltd. 韩国A1 PROS电子韩国A1 PROS电子有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,25A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,20A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,25A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,20A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO CHENMKO | |||
OUTDOORLAMPCLUSTER | FORYARDNingbo Foryard Optoelectronics Co., Ltd. 复洋宁波复洋光电有限公司 | |||
1mmAPERTUREOPTO-ELECTRONICSINGLECHANNELSLOTTEDINTERRUPTERSWITCHESWITHTRANSISTORSENSORS DESCRIPTION TheH21A_andH22A_seriesofopaquephotointerruptersaresinglechannelswitchesconsistingofaGalliumArsenideinfraredemittingdiodeandaNPNsiliconphototransistormountedinapolycarbonatehousing.The packageisdesignedtooptimisethemechanicalresolution,couplinge | ISOCOM Isocom Components 2004 LTD | |||
SLOTTEDOPTICALSWITCH | QT QT Brightek (QTB) | |||
PHOTOTRANSISTOROPTICALINTERRUPTERSWITCH DESCRIPTION TheH21A1,H21A2andH21A3consistofagalliumarsenideinfraredemittingdiodecoupledwithasiliconphototransistorinaplastichousing.Thepackagingsystemisdesignedtooptimizethemechanicalresolution,couplingefficiency,ambientlightrejection,costandreliability.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 | |||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 | |||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 | |||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 | |||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 |
详细参数
- 型号:
H21A2_Q
- 功能描述:
光学开关(透射型,光电晶体管输出) INTERUP MOD TRANS
- RoHS:
否
- 制造商:
Omron Electronics
- 输出设备:
Phototransistor
- 槽宽:
3.4 mm
- 光圈宽度:
0.5 mm 集电极—发射极最大电压
- VCEO:
30 V
- 最大集电极电流:
20 mA
- 安装风格:
Through Hole
- 最大工作温度:
+ 85 C
- 最小工作温度:
- 25 C
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
DIP-4 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
HT |
23+ |
LQFP |
18000 |
询价 | |||
FAIRCHILD |
06+ |
原厂原装 |
9570 |
只做全新原装真实现货供应 |
询价 | ||
HT |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD |
13+ |
DIP-4 |
14058 |
原装分销 |
询价 | ||
WYC原装 |
1325+ROHS |
DIP-4 |
14930 |
全新现货!低价支持实单!!一片起订 |
询价 | ||
FAIRCHI |
2017+ |
DIP-4 |
8598 |
只做原装正品假一赔十! |
询价 | ||
ON |
2020+ |
DIP-4 |
56546 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FAIRCHILD |
19+ |
DIP4 |
72510 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 |
相关规格书
更多- H21A3
- H21A5
- H21B1
- H21B1_Q
- H21B122G
- H21B2_Q
- H21B3_Q
- H21B5
- H21CG1
- H21CG1R2
- H21L1
- H21LO1
- H21LOB_Q
- H21LOI_Q
- H21LTB_04
- H21P-SHF-AA
- H21S13
- H21UL
- H22
- H-22_10
- H22000103252H
- H22005011021H
- H22010005253H
- H220100100211
- H22-1
- H2210000012CE37
- H221010
- H2210241142E9
- H22125010426H
- H2215
- H2215C
- H2215T
- H2216JFGR 915725
- H2216JFQJRNA 919993
- H2216XXKR 919023
- H2218218-T11B4S
- H2218218-T15B19SA
- H2218218-T15B5S
- H2218218-T17B35S
- H2218218-T21B16P
- H221DS
- H221Y
- H22-2
- H2222A
- H2225E-CD
相关库存
更多- H21A4
- H21A6
- H21B1_0088K
- H21B104F
- H21B2
- H21B3
- H21B4
- H21B6
- H21CG1R1
- H21L
- H21L2
- H21LOB
- H21LOI
- H21LTB
- H21LTI
- H21S12
- H21S38
- H21UM
- H-22
- H2-20
- H2200251002B318
- H22006011040H
- H2201001000C0
- H22020011421H
- H221000000000
- H22100011421H
- H22102411021G60
- H221024C220D5
- H2214698-336KVD
- H-2215
- H2215R
- H2216
- H2216JFQGR 915726
- H2216JFTGR 915727
- H2218218-T11B35S
- H2218218-T15B19S
- H2218218-T15B35S
- H2218218-T17B26S
- H2218218-T19B32S
- H2218C
- H221NRB
- H222
- H222210J
- H2225E-CA
- H222DS