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AH21A2

PrivacyMaskFunction

A1PROSA1 PROs co., Ltd.

韩国A1 PROS电子韩国A1 PROS电子有限公司

A1PROS

CEB21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,25A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CEB21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,25A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CEU21A2

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER

CHM21A2PAPT

N-ChannelEnhancementModeFieldEffectTransistor

CHENMKOCHENMKO

CHENMKO

CHENMKO

FYCL-S21A2

OUTDOORLAMPCLUSTER

FORYARDNingbo Foryard Optoelectronics Co., Ltd.

复洋宁波复洋光电有限公司

FORYARD

H21A2

1mmAPERTUREOPTO-ELECTRONICSINGLECHANNELSLOTTEDINTERRUPTERSWITCHESWITHTRANSISTORSENSORS

DESCRIPTION TheH21A_andH22A_seriesofopaquephotointerruptersaresinglechannelswitchesconsistingofaGalliumArsenideinfraredemittingdiodeandaNPNsiliconphototransistormountedinapolycarbonatehousing.The packageisdesignedtooptimisethemechanicalresolution,couplinge

ISOCOM

Isocom Components 2004 LTD

ISOCOM

H21A2

SLOTTEDOPTICALSWITCH

QT

QT Brightek (QTB)

QT

H21A2

PHOTOTRANSISTOROPTICALINTERRUPTERSWITCH

DESCRIPTION TheH21A1,H21A2andH21A3consistofagalliumarsenideinfraredemittingdiodecoupledwithasiliconphototransistorinaplastichousing.Thepackagingsystemisdesignedtooptimizethemechanicalresolution,couplingefficiency,ambientlightrejection,costandreliability.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

IXF-21A2AF

CrystalFilter3LeadMetalPackage

ILSIILSI America LLC

艾博康深圳艾博康商务咨询有限公司

ILSI

IXF-21A2AT

CrystalFilter3LeadMetalPackage

ILSIILSI America LLC

艾博康深圳艾博康商务咨询有限公司

ILSI

IXF-21A2BF

CrystalFilter3LeadMetalPackage

ILSIILSI America LLC

艾博康深圳艾博康商务咨询有限公司

ILSI

IXF-21A2BT

CrystalFilter3LeadMetalPackage

ILSIILSI America LLC

艾博康深圳艾博康商务咨询有限公司

ILSI

IXF-21A2CF

CrystalFilter3LeadMetalPackage

ILSIILSI America LLC

艾博康深圳艾博康商务咨询有限公司

ILSI

详细参数

  • 型号:

    H21A2_Q

  • 功能描述:

    光学开关(透射型,光电晶体管输出) INTERUP MOD TRANS

  • RoHS:

  • 制造商:

    Omron Electronics

  • 输出设备:

    Phototransistor

  • 槽宽:

    3.4 mm

  • 光圈宽度:

    0.5 mm 集电极—发射极最大电压

  • VCEO:

    30 V

  • 最大集电极电流:

    20 mA

  • 安装风格:

    Through Hole

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 25 C

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
DIP-4
50000
全新原装正品现货,支持订货
询价
HT
23+
LQFP
18000
询价
FAIRCHILD
06+
原厂原装
9570
只做全新原装真实现货供应
询价
HT
23+
DIP
5000
原装正品,假一罚十
询价
FAIRCHILD
13+
DIP-4
14058
原装分销
询价
WYC原装
1325+ROHS
DIP-4
14930
全新现货!低价支持实单!!一片起订
询价
FAIRCHI
2017+
DIP-4
8598
只做原装正品假一赔十!
询价
ON
2020+
DIP-4
56546
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
19+
DIP4
72510
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
更多H21A2_Q供应商 更新时间2024-4-27 11:00:00