首页 >H11B2SVM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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6PINPHOTODARLINGTONPHOTOCOUPLER Description TheTIL113,4NXXandH11BXseriesofdeviceseachconsistofaninfraredemittingdiodeopticallycoupledtoaphotodarlingtondetector. Theyarepackagedina6-pinDIPpackageandavailableinwide-leadspacingandSMDoption. Features: •4NXXseries:4N29,4N30,4N31,4N32,4N3 | EverlightEverlight Electronics Co., Ltd 台湾亿光亿光电子工业股份有限公司 | Everlight | ||
6PINPHOTODARLINGTONPHOTOCOUPLER Description TheTIL113,4NXXandH11BXseriesofdeviceseachconsistofaninfraredemittingdiodeopticallycoupledtoaphotodarlingtondetector. Theyarepackagedina6-pinDIPpackageandavailableinwide-leadspacingandSMDoption. Features: •4NXXseries:4N29,4N30,4N31,4N32,4N3 | EverlightEverlight Electronics Co., Ltd 台湾亿光亿光电子工业股份有限公司 | Everlight | ||
6PINPHOTODARLINGTONPHOTOCOUPLER Description TheTIL113,4NXXandH11BXseriesofdeviceseachconsistofaninfraredemittingdiodeopticallycoupledtoaphotodarlingtondetector. Theyarepackagedina6-pinDIPpackageandavailableinwide-leadspacingandSMDoption. Features: •4NXXseries:4N29,4N30,4N31,4N32,4N3 | EverlightEverlight Electronics Co., Ltd 台湾亿光亿光电子工业股份有限公司 | Everlight | ||
OPTICALLYCOUPLEDISOLATORPHOTODARLINGTONOUTPUT DESCRIPTION TheH11B_seriesofopticallycoupledisolatorsconsistofaninfraredlightemittingdiodeandNPNsiliconphotodarlingtoninaspaceefficientdualinlineplasticpackage. FEATURES ●Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpartno. | ISOCOMISOCOM COMPONENTS 英国安数光 | ISOCOM | ||
Glass-EncapsulateDiodes | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | ||
SILICONEPITAXIALPLANERZENERDIODES forstabilizedpowersupply Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. •Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. •Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. •Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarZenerDiodesforStabilizer Features •UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. •Thesediodesaredeliveredtaped. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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