H06N60RA规格书应用电路贸易商英飞凌-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
06N60E	文件：561.49 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
AIHD06N60R	文件：1.92413 Mbytes Page：16 Pages	IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
AIHD06N60RF	文件：1.74081 Mbytes Page：16 Pages	IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
CJP06N60	文件：227.22 Kbytes Page：4 Pages	PowerfiledEffectTransistor FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd
CMT06N60	文件：193.63 Kbytes Page：6 Pages	POWERFIELDEFFECTTRANSISTOR GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic	CHAMPChampion Microelectronic Corp. 虹冠虹冠电子
CMT06N60	文件：246.73 Kbytes Page：6 Pages	POWERFIELDEFFECTTRANSISTOR	CHAMPChampion Microelectronic Corp. 虹冠虹冠电子
CMT06N60	文件：191.5 Kbytes Page：6 Pages	POWERFIELDEFFECTTRANSISTOR	ETCList of Unclassifed Manufacturers 未分类制造商
EMD06N60A	文件：199.56 Kbytes Page：6 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司
EMD06N60CS	文件：200.92 Kbytes Page：5 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司
EMD06N60F	文件：177.2 Kbytes Page：5 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司
FMC06N60ES	文件：332.86 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FMC06N60ES	文件：548.64 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
FMI06N60ES	文件：547.29 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
FMP06N60E	文件：561.49 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
FMP06N60ES	文件：537.45 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
FMP06N60ES	文件：305.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FMV06N60E	文件：529.48 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
FMV06N60ES	文件：547.53 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
FTA06N60C	文件：54.71 Kbytes Page：6 Pages	N-ChannelEnhancement InPowerProductLines	ETC1List of Unclassifed Manufacturers 未分类制造商
H06N60	文件：71.89 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMC 华昕

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	H06N60RA	INFINEON	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市百视威讯电子科技有限公司	H06N60RA		23+	N/A	46480	正品授权货源可靠	询价
深圳市国宇半导体科技有限公司	H06N60RA	INFINEON/英飞凌	23+	TO-252	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	H06N60RA	INFINEON	22+	TO-252	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	H06N60RA	INFINEON	23+	TO-252	6000	原装正品，支持实单	询价
深圳市华芯源电子有限公司	H06N60RA	INFINEON/英飞凌	22+	TO-252	92528	终端免费提供样品可开13%增值税发票	询价
深圳和润天下电子科技有限公司	H06N60RA	INFINEON/英飞凌	22+	TO-252	92528		询价
深圳市创新迹电子有限公司	H06N60RA	INFINEON	22+	TO-252	25000	只做原装进口现货,专注配单	询价
深圳市安富世纪电子有限公司	H06N60RA	INFINEON	23+	TO-252	8000	只做原装现货	询价
深圳市特顺芯科技有限公司	H07	松下电阻传感器		TO-92	3000		询价

更多H06N60RA供应商更新时间2024-4-25 10:54:00

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