Wifi

．The GW2169 is a GaAs MMIC SPDT switch in a DFN 1.5mm×1.5mm 6 lead plastic package. \n．The GW2169 features low insertion loss, high isolation and positive voltage operation with 2 controls. Typical applications are for IEEE WLAN 802.11 a/b/g/n system or systems operating frequency 2.4GHz and 6.0GHz ．WLAN 802.11a/b/g/n Applications\n．Low Insertion Loss：0.4dB@2.4 ~ 2.5GHz\n0.5dB@4.9 ~ 6.0GHz\n．High Isolation：28dB@2.4 ~ 2.5GHz\n33dB@4.9 ~ 6.0GHz\n．DFN 1.5mm×1.5mm 6 Lead Green Package\n．0.5μm GaAs pHEMT ProcessLow Cost and Good Reliability Performance;

Qwave

楷新

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V)

文件：89.35 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V)

文件：89.35 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

文件：107.13 Kbytes 页数：3 Pages

Fairchild

仙童半导体