IL216AT

PHOTOTRANSISTORSMALLOUTLINESURFACEMOUNTOPTOCOUPLER

DESCRIPTION TheIL215AT/216AT/217ATisanopticallycoupledpairwithaGalliumArsenideinfraredLEDandasiliconNPNphototransistor.Signalinformation,includingaDClevel,canbetransmittedbythedevicewhilemaintainingahighdegreeofelectricaisolationbetweeninputandoutput.The

IL216AT

Highcurrenttransferratio

INA216

Smallsize,Low-Power,Unidirectional,CURRENTSHUNTMONITORZero-DriftSeries

INA216

SmallSize,Low-Power,Unidirectional,CURRENTSHUNTMONITORZero-DriftSeries

INA216

SmallSize,Low-Power,Unidirectional,CURRENTSHUNTMONITOR

INA216

SmallSize,Low-Power,Unidirectional,CURRENTSHUNTMONITORZerø-DriftSeries

1FEATURES 2•CHIP-SCALEPACKAGE •COMMON-MODERANGE:+1.8Vto+5.5V •OFFSETVOLTAGE:±30μV •GAINERROR:±0.2%MAX •CHOICEOFGAINS: –INA216A1:25V/V –INA216A2:50V/V –INA216A3:100V/V –INA216A4:200V/V •QUIESCENTCURRENT:13μA •BUFFEREDVOLTAGEOUTPUT:NoAdditional OpAmp

IS216

SmallOutlinePhotoDMOS-FETRelaywithhighloadcurrentcapabilities(1.7A)

DESCRIPTION TheIS216isaminiature1-FormAsolidstaterelayina4pinSOPpackage.TheIS216utilisesMOSFETtechnologythatisopticallycoupledtoahighlyefficientGaAlAsinfraredlightemittingdiodes. FEATURES ●SOP4pinpackageforcompactPCBs ●Hghloadcapability(1.7A) ●Lo

IS216D

SmallOutlinePhotoDMOS-FETRelaywithveryhighloadcurrentcapabilities(5A)

DESCRIPTION TheIS216Disaminiature1-FormAsolidstaterelayina4pinSOPpackage.TheIS216utilisesMOSFETtechnologythatisopticallycoupledtoahighlyefficientGaAlAsinfraredlightemittingdiodes. FEATURES ●SOP4pinpackageforcompactPCBs ●Highloadcapability(5A) ●Lo

ISCRF216

iscSiliconNPNRFTransistor

DESCRIPTION •Highgainbandwidthproduct fT=9GHz(Typ)@VCE=5V，IC=20mA，f=0.9GHz •Highgain,lownoisefigure ︱S21e︱2=13.5dB@VCE=5V，IC=20mA，f=0.9GHz, NF=1.6dB(Typ)@VCE=5V，IC=5mA，f=0.9GHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISLA216P

16-Bit,250MSPS/200MSPS/130MSPSADC