INTRODUCTION

This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and erase operations.

■ Flexible SmartVoltage Technology

- 2.7 V–3.6 V Read/Program/Erase

- 12 V VPP Fast Production

Programming

■ 2.7 V or 1.65 V I/O Option

- Reduces Overall System Power

■ High Performance

- 2.7 V–3.6 V: 90 ns Max Access Time

- 3.0 V–3.6 V: 80 ns Max Access Time

■ Optimized Block Sizes

- Eight 8-KB Blocks for Data,

Top or Bottom Locations

- Up to Sixty-Three 64-KB Blocks for

Code

■ Block Locking

- VCC-Level Control through WP#

■ Low Power Consumption

- 10 mA Typical Read Current

■ Absolute Hardware-Protection

- VPP = GND Option

- VCC Lockout Voltage

■ Extended Temperature Operation

- –40 °C to +85 °C

■ Flash Data Integrator Software

- Flash Memory Manager

- System Interrupt Manager

- Supports Parameter Storage,

Streaming Data (e.g., Voice)

■ Automated Program and Block Erase

- Status Registers

■ Extended Cycling Capability

- Minimum 100,000 Block Erase

Cycles Guaranteed

■ Automatic Power Savings Feature

- Typical ICCS after Bus Inactivity

■ Standard Surface Mount Packaging

- 48-Ball µBGA* Package

- 48-Lead TSOP Package

- 40-Lead TSOP Package

■ Footprint Upgradeable

- Upgrade Path for 4-, 8-, 16-, and 32-

Mbit Densities

■ ETOX™ VI (0.25 µ) Flash Technology

GT28F320B3TA110属于集成电路（IC） > 存储器。英特尔（集成电子公司）制造生产的GT28F320B3TA110存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。