| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
GSS9922E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM 勤益投資控股股份有限公司 | GTM | |
Series99짰BallpointAllen짰HexSocketScrewBlade | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
IEEE1394,FORPCBMOUNTING | ASSMANNASSMANN WSW COMPONENTS ASSMANN WSW组件有限公司 | ASSMANN | ||
10-Bitto18-BitProgrammableAngularMagneticEncoderICforOn-andOff-AxisApplications Description TheBroadcom®AEAT-9922isanangularmagneticrotary sensorthatprovidesaccurateangularmeasurementovera full360degreesofrotation. ItisasophisticatedsystemthatusesintegratedHallsensor elementswithcomplexanaloganddigitalsignalprocessing withinasinglede | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
Capableof1.8VGateDrive,OptimalDC/DCBatteryApplication | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
Capableof1.8VGateDrive,OptimalDC/DCBatteryApplication | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
DualN-ChannelEnhancementModeMOSFET Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •HighCurrentGain •ComplementtoDMBT9022 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
PNPDUAL,MATCHEDPAIRSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •LowNoise •HighCurrentGain •MatchedPairofTransistors | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
3-PinSwitch-ModeLEDLampDriverIC | FS First Silicon Co., Ltd | FS | ||
SchottkyBarrierDiodesTMForMixersandDetectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheGTS9922Eprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *OptimalDC/DCbatteryapplication *Surfacemountpackage | GTM 勤益投資控股股份有限公司 | GTM | ||
10-Bitto18-BitProgrammableAngularMagneticEncoderICforOn-andOff-AxisApplications Description TheBroadcom®AEAT-9922isanangularmagneticrotary sensorthatprovidesaccurateangularmeasurementovera full360degreesofrotation. ItisasophisticatedsystemthatusesintegratedHallsensor elementswithcomplexanaloganddigitalsignalprocessing withinasinglede | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
10-Bitto18-BitProgrammableAngularMagneticEncoderICforOn-andOff-AxisApplications Description TheBroadcom®AEAT-9922isanangularmagneticrotary sensorthatprovidesaccurateangularmeasurementovera full360degreesofrotation. ItisasophisticatedsystemthatusesintegratedHallsensor elementswithcomplexanaloganddigitalsignalprocessing withinasinglede | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM |
详细参数
- 型号：
GSS9922E
- 制造商：
GTM
- 制造商全称：
GTM
- 功能描述：
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GTM |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
GTM |
23+ |
SOP-8 |
63000 |
原装正品现货 |
询价 | ||
GTM-勤益 |
24+25+/26+27+ |
SOP-8.贴片 |
57500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
GTM |
22+ |
SOP-8 |
3240 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
GTM |
22+ |
SOP-8 |
5000 |
绝对全新原装现货 |
询价 | ||
23+ |
N/A |
46590 |
正品授权货源可靠 |
询价 | |||
GTM |
SOP-8 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
GTM |
2022+ |
SOP-8 |
79999 |
询价 | |||
GTM |
2022+ |
SOP-8 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
GTM |
SOP-8 |
265209 |
假一罚十原包原标签常备现货! |
询价 |
相关规格书
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- GSX-028-1100-NAT
