P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：308.77 Kbytes 页数：5 Pages

GTM

勤益投资控股

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：308.77 Kbytes 页数：5 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

文件：58.57 Kbytes 页数：7 Pages

Intersil

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic d

文件：160.83 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.92643 Mbytes 页数：7 Pages

VishayVishay Siliconix

威世科技