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IRF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF9230

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9230

TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A)

ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF9230

-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs

Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor

Intersil

Intersil Corporation

IRF9230

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半导体

IRFE9230

P-CHANNELPOWERMOSFET

VDSS-200V ID(cont)-3.6A RDS(on)0.825Ω FEATURES •SURFACEMOUNT •SMALLFOOTPRINT •HERMETICALLYSEALED •DYNAMICdv/dtRATING •AVALANCHEENERGYRATING •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT

SEME-LAB

Seme LAB

IRFE9230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

BVDSS-200V RDS(on)0.80Ω ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt

IRF

International Rectifier

IRFE9230

SimpleDriveRequirements

IRF

International Rectifier

IRFF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFF9230

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

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