首页>GS8160E36T-133I>规格书详情
GS8160E36T-133I中文资料GSI数据手册PDF规格书
相关芯片规格书
更多- GS8160E36BT-250V
- GS8160E36BT-150
- GS8160E36BT-150I
- GS8160E36BT-200IV
- GS8160E36T-133
- GS8160E36BGT-250
- GS8160E36BT-200V
- GS8160E36BT-200I
- GS8160E36BT-250IV
- GS8160E36BGT-200V
- GS8160E36BGT-250I
- GS8160E36BGT-150I
- GS8160E36BGT-200IV
- GS8160E36BT-250
- GS8160E36BGT-250IV
- GS8160E36BGT-150V
- GS8160E36BGT-200I
- GS8160E36BGT-150IV
GS8160E36T-133I规格书详情
Functional Description
Applications
The GS8160E18/32/36T is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Features
• FT pin for user-configurable flow through or pipeline
operation
• Dual Cycle Deselect (DCD) operation
• 2.5 V or 3.3 V +10/–10 core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
产品属性
- 型号:
GS8160E36T-133I
- 制造商:
GSI
- 制造商全称:
GSI Technology
- 功能描述:
1M x 18, 512K x 36 18Mb Sync Burst SRAMs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GSI |
QFP |
20000 |
原装正品 |
询价 | |||
只做原装 |
21+ |
QFP |
36520 |
一级代理/放心采购 |
询价 | ||
GSI |
23+ |
QFP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
GSI |
23+ |
QFP |
868800 |
只做原装正品,欢迎来电咨询! |
询价 | ||
GSI |
22+ |
QFP |
18000 |
原装现货原盒原包.假一罚十 |
询价 | ||
原厂 |
2023+ |
QFP |
50000 |
原装现货 |
询价 | ||
GSI |
23+ |
QFP |
8000 |
全新原装现货,欢迎来电咨询 |
询价 | ||
GSI |
2016+ |
TQFP |
6523 |
只做进口原装现货!或订货假一赔十! |
询价 | ||
GSI |
22+ |
TQFP |
5000 |
全新原装现货!自家库存! |
询价 | ||
GSI |
23+ |
QFP |
1002 |
优势库存 |
询价 |