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GS73024AB

Asynchronous SRAM

GSI

GSI Technology

GS73024AB-10

Asynchronous SRAM

GSI

GSI Technology

GS73024AB-10I

Asynchronous SRAM

GSI

GSI Technology

GS73024AB-12

Asynchronous SRAM

GSI

GSI Technology

GS73024AB-12I

Asynchronous SRAM

GSI

GSI Technology

GS73024AB-8

Asynchronous SRAM

GSI

GSI Technology

GS73024AB-8I

Asynchronous SRAM

GSI

GSI Technology

73024

MMCXPLUGSTRAIGHTCRIMP,RG178

POMONA

Pomona Electronics

GS73024B

128KX243MBASYNCHRONOUSSRAM

ETCList of Unclassifed Manufacturers

未分类制造商

ISL73024SEH

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL73024SEHL/PROTO

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL73024SEHML

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL73024SEHMX

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL73024SEHX/SAMPLE

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

LA73024AV

DoubleScartInterfaceIC

Overview ThisLA73024AVisadoublescartinterfaceIC. Functions •AVswitches, •ChangeableGainAMP •6dBAMP+driver •FSSoutput

SANYOSanyo

三洋三洋电机株式会社

详细参数

  • 型号:

    GS73024AB

  • 制造商:

    GSI

  • 制造商全称:

    GSI Technology

  • 功能描述:

    Asynchronous SRAM

供应商型号品牌批号封装库存备注价格
GSI
16+
BGA
2500
进口原装现货/价格优势!
询价
GSITECHNOLOGY
RoHSCompliant
原厂封装
447
neworiginal
询价
CONEXANT
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
询价
CONEXANT
BGAQFP
6688
15
现货库存
询价
23+
N/A
49100
正品授权货源可靠
询价
GSI
14+
1218
全新进口原装
询价
GSI
23+
BGA
20000
原厂原装正品现货
询价
GSITECHNO
20+
NA
90000
全新原装正品/库存充足
询价
GSI
2023+
BGA
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
GSI
23+
NA
1218
原装正品代理渠道价格优势
询价
更多GS73024AB供应商 更新时间2024-5-25 15:14:00