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GSCLM358

DUALOPERATIONALAMPLIFIER

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GSCLM358

DUALOPERATIONALAMPLIFIER

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

HLM358

LOWPOWERDUALOPERATIONALAMPLIFIERS

Description Thesedevicesconsistoftwoindependent,highgain,internallyfrequencycompensatedoperationalamplifiersdesignedoperatefromasinglesupplyoverawiderangeofvoltages.Operationfromsplitsuppliesalsoispossibleifthedifferencebetweenthetwosuppliesis3Vto32V,a

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HLM358

LowPowerDualOperationalAmplifiers

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HLM358P

LOWPOWERDUALOPERATIONALAMPLIFIERS

Description Thesedevicesconsistoftwoindependent,highgain,internallyfrequencycompensatedoperationalamplifiersdesignedoperatefromasinglesupplyoverawiderangeofvoltages.Operationfromsplitsuppliesalsoispossibleifthedifferencebetweenthetwosuppliesis3Vto32V,a

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HLM358S

LOWPOWERDUALOPERATIONALAMPLIFIERS

Description Thesedevicesconsistoftwoindependent,highgain,internallyfrequencycompensatedoperationalamplifiersdesignedoperatefromasinglesupplyoverawiderangeofvoltages.Operationfromsplitsuppliesalsoispossibleifthedifferencebetweenthetwosuppliesis3Vto32V,a

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HVC358B

VariableCapacitanceDiodeforVCO

Features •Highcapacitanceratio.(n=2.20.min) •Lowseriesresistance.(rs=0.4max) •GoodC-Vlinearity. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC358B

VariableCapacitanceDiodeforVCO

Features •Highcapacitanceratio.(n=2.2min) •Lowseriesresistance.(rs=0.4Ωmax) •GoodC-Vlinearity. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HVC358B

VariableCapacitanceDiodeforVCO

FEATURES •Highcapacitanceratio.(n=2.20.min) •Lowseriesresistance.(rs=0.4Ωmax) •GoodC-Vlinearity. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

HVD358B

VariableCapacitanceDiodeforVCO

Features •Highcapacitanceratio.(n=2.20min) •Lowseriesresistance.(rs=0.40Ωmax) •GoodC-Vlinearity. •SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

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