首页 >GRP-DATA-JANTXV2N6849>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow | IRF International Rectifier | IRF | ||
POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow | IRF International Rectifier | IRF | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTOR Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitythe | IRF International Rectifier | IRF | ||
POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow | IRF International Rectifier | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTOR Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitythe | IRF International Rectifier | IRF |
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