High Gain, Low Current LNATuning Range: 0.1 to 4.2 GHz

High Gain, Low Current LNA\n\nTuning Range: 0.1 to 4.2 GHz\n\n\n\nGRF2106W is a low cost, high gain LNA designed for a wide range of applications up to 4.2 GHz.\n\nThe device is operated from a supply voltage (Vdd) range of 2.7 to 5.0 V with Iddq set from 10 mA to 30 mA for optimal efficiency and li Reference: 3.3V/15mA/2.45GHz\n• EVB NF: 0.8 dB\n• Gain: 21.5 dB\n• OP1dB: 11.0 dBm\n• OIP3: 21.0 dBm\n• Flexible Bias Voltage and Current\n• Minimal External Components\n• Process: GaAs pHEMT\n• Tested to AEC-Q100 Grade 2 (Pending);

Guerrilla RF

100V/1A Peak, Low Cost, High Frequency Half Bridge Driver

100V/1A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2106 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibilit

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Intersil

Low Voltage Driver for Synchronous Rectification

Low Voltage Driver for Synchronous Rectification The HIP2106A is a high frequency MOSFET driver optimized to drive two N-channel power MOSFETs in a synchronous buck converter topology. This driver, combined with Renesas multi-phase buck PWM controllers, forms a complete single-stage core-voltage

文件：242.72 Kbytes 页数：2 Pages

RENESAS

瑞萨

Low Voltage Driver for Synchronous Rectification

Features • Adaptive shoot-through protection (HIP2106A only) • HI and LI inputs (HIP2105 only) • 0.4Ω ON-resistance and 4A sink current capability • Low tri-state hold-off time (20ns) (HIP2106A only) • Supports 3.3V and 5V HI/LI or PWM input • Power-On Reset (POR) • Dual Flat No-Lead (DFN)

文件：996.25 Kbytes 页数：17 Pages

RENESAS

瑞萨