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GRF2011

Broadband Linear Gain Block 0.05 to 3.8 GHz

GUERRILLA

Guerrilla RF, Inc.

GRHI-2011

ASSEMBLYDRAWINGHIGHIMPACTROCKERSWITCH1.124x.550PANEL

CWIND

CW Industries

H2011U

4&6TumblerPowerSwitchlocks

Features/Benefits •Positivedetent •Multi-poleandmulti-position •Snap-togetherassembly •Powerswitching

CK-COMPONENTS

C&K Components

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011(L)_15

SiliconNChannelMOSFETSeriesPowerSwitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
GRF
19+
标准封装
750
询价
GUERRILLA RF
24+
DFN
39500
进口原装现货 支持实单价优
询价
GUERRILLA RF
24+
con
2500
优势库存,原装正品
询价
Guerrilla
2000
询价
GUERRILLARF
23+
1.5DFN-6
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
GRF
2405+
原厂封装
1471
只做原装优势现货库存 渠道可追溯
询价
GRF
2324+
1471
原装正品,超低价出售
询价
GuerrillaRF
24+
SMD
8000
射频放大器
询价
GUERRILLA-RF
1537+
2.0QFN-12
144
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
GUERRILLARF
23+
DFN
30000
代理全新原装现货,价格优势
询价
更多GRF2011供应商 更新时间2025-5-11 8:00:00