RKP436KE

UltrasmallPackageCompositePinDiodeforAntennaSwitching

Features •Anoptimalsolutionforantennaswitchinginmobilephones. •Lowcapacitance.(C=0.35pFmax) •Lowforwardresistance.(rf=1.1Ω,rf=1.3Ωmax@IF=10mA,f=100MHz) •Halogenfree,EnvironmentalfriendlyPackageincludesConformitytoRoHSDirective. •UltrasmallPackag

RKP436KER

UltrasmallPackageCompositePinDiodeforAntennaSwitching

Features •Anoptimalsolutionforantennaswitchinginmobilephones. •Lowcapacitance.(C=0.35pFmax) •Lowforwardresistance.(rf=1.1Ω,rf=1.3Ωmax@IF=10mA,f=100MHz) •Halogenfree,EnvironmentalfriendlyPackageincludesConformitytoRoHSDirective. •UltrasmallPackag

SIA436DJ

N-Channel8V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedPowerPAK®SC-70package -Smallfootprintarea •100Rgtested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitchforportableapplications suchassmartphones

SIA436DJ

N-Channel8V(D-S)MOSFET

SIA436DJ

N-Channel8V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedPowerPAK®SC-70package    -Smallfootprintarea •100Rgtested •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitchforportableapplicationssuchassmartphones

SIR436DP

N-Channel25-V(D-S)MOSFET

SIS436DN

N-Channel25-V(D-S)MOSFET

SIS436DN

N-Channel25-V(D-S)MOSFET

SR436

435.80MHzOne-PortSAWResonator

435.80MHzOne-PortSAWResonator •Idealfor435.80MHzTransmitters •VeryLowInsertionLoss •QuartzStability •Rugged,Hermetic,LowProfileTO-39Package

STK436

THICKFILMHYBRIDIC

Features ©IMST,2Channelsby1PowerSupply. Smallshocknoisebecauseofdirectcouplingemitterfeedbacked. STK-433-105,435-105,436-105and441-105arefortheuseofTc=105°C