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IRGP50B60PD1

WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE

VCES=600V VCE(on)typ.=2.00V @VGE=15VIC=33A Features •NPTTechnology,PositiveTemperatureCoefficient •LowerVCE(SAT) •LowerParasiticCapacitances •MinimalTailCurrent •HEXFREDUltraFastSoft-RecoveryCo-PackDiode •TighterDistributionofParameter

IRF

International Rectifier

IRGP50B60PD1

WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGP50B60PD1

IGBT

DESCRIPTION ·LowerVCE(SAT) ·TighterDistributionofParameters ·HigherReliability APPLICATIONS ·TelecomandServerSMPS ·PFCandZVSSMPSCircuits ·UninterruptablePowerSupplies

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRGP50B60PD1-EP

WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGP50B60PD1-EP

WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE

VCES=600V VCE(on)typ.=2.00V @VGE=15VIC=33A EquivalentMOSFETParameters RCE(on)typ.=61mΩ ID(FETequivalent)=50A Features •NPTTechnology,PositiveTemperatureCoefficient •LowerVCE(SAT) •LowerParasiticCapacitances •MinimalTailCurrent •H

IRF

International Rectifier

IRGP50B60PD1PBF

WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

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