EEPROM存储系列

GN

旌芯

65,536-bit/32,768-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C64-2 is a 1.8V (1.8V-5.5V) 64K-bit (8192 x 8) Electrically Erasable PROM, IS24C64-3 is a 2.5V (2.5V-5.5V) 64K-bit (8192 x 8) Electrically Erasable PROM, IS24C32-2 is a 1.8V (1.8V-5.5V) 32K-bit (4096 x 8) Electrically Erasable PROM and the IS24C32-3 is a 2.5V (2.5V-5.5V) 32K-b

文件：81.96 Kbytes 页数：11 Pages

ISSI

矽成半导体

64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C32A/B and IS24C64A/B are electrically erasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/B and IS24C64A/B contain a memory array of 32K bits (4K x 8) and 64K-bits (8K x 8), respectively. Each device is organized into 32 byte pages fo

文件：132.61 Kbytes 页数：17 Pages

ISSI

矽成半导体

64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C32A/B and IS24C64A/B are electrically erasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/B and IS24C64A/B contain a memory array of 32K bits (4K x 8) and 64K-bits (8K x 8), respectively. Each device is organized into 32 byte pages fo

文件：132.61 Kbytes 页数：17 Pages

ISSI

矽成半导体