特殊闪存产品-Small-Sector Flash

GLS29EE512是一款64K x8 CMOS以页为单位写入的EEPROMs,由SST独家专利制造，高性能CMOS超级闪存技术。与其他替代方法相比，它的分栅单元设计和厚的氧化层隧道注入器使其获得更好的可靠性和可制造性。这款产品写入是由单电源供电。内部擦除/编程对用户来说都是透明的。这款产品符合JEDEC标准插脚引线，适用于字节宽度存储器。(1)

Greenliant

绿芯半导体

512 Kbit (64K x8) Page-Write EEPROM

文件：871.45 Kbytes 页数：23 Pages

Greenliant

绿芯半导体

512 Kbit (64K x8) Page-Write EEPROM

PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro

文件：423.31 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

512 Kbit (64K x8) Page-Write EEPROM

文件：423.31 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

64K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase ope

文件：153.67 Kbytes 页数：22 Pages

WINBOND

华邦电子