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SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4C-EHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4C-NHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4C-NHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4C-PH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4C-PH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4C-PHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4I-EH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4I-EH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4I-EHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4I-EHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4I-NH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4I-NH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4I-NHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4I-NHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

SST29EE512-70-4I-PHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology,Inc.

详细参数

  • 型号:

    GLS29EE512-70-4I-NHE

  • 功能描述:

    电可擦除可编程只读存储器 64K X 8 70ns

  • RoHS:

  • 制造商:

    Atmel

  • 存储容量:

    2 Kbit

  • 组织:

    256 B x 8

  • 数据保留:

    100 yr

  • 最大时钟频率:

    1000 KHz

  • 最大工作电流:

    6 uA

  • 工作电源电压:

    1.7 V to 5.5 V

  • 最大工作温度:

    + 85 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-8

供应商型号品牌批号封装库存备注价格
Greenliant(绿芯)
2023+
N/A
4550
全新原装正品
询价
23+
N/A
64610
正品授权货源可靠
询价
三年内
1983
纳立只做原装正品13590203865
询价
Greenliant
2019
TSOP32
12000
原装正品现货,可开发票,假一赔十
询价
Greenliant
20+
NA
90000
全新原装正品/库存充足
询价
GREENLIANTSYSTEMS
23+
NA
36147
原装现货,专业配单专家
询价
GREENLIANT
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
GREENLIANTSYSTEMS
21+
NA
40932
只做原装,一定有货,不止网上数量,量多可订货!
询价
Greenliant
2021++
只做原装
5850
进口原装假一赔百,现货热卖
询价
GREENLIANT
2122+
TSOP32
17870
全新原装正品现货,假一赔十
询价
更多GLS29EE512-70-4I-NHE供应商 更新时间2024-5-1 9:01:00