首页 >GEM369>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNSILICONTRANSISTOR APPLICATIONS GeneralPurposeAmplifierApplication. | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | Huashan | ||
IEC60320INLETSOCKETWITHVOLTAGESELECT,FLANGEMOUNT | POWERDYNAMICS PowerDynamics, Inc | POWERDYNAMICS | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz GeneralDescription TheHMC-ALH369isaGaAsMMICHEMTthreestage,self-biasedLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides22dBofgain,fromasinglebiassupplyof+5V@66mAwithanoisefigureof2dB.TheHMC-ALH369amplifierdieisidealfori | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER GeneralDescription TheHMC-ALH369isaGaAsMMICHEMTthreestage,self-biasedLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides22dBofgain,fromasinglebiassupplyof+5V@66mAwithanoisefigureof2dB.TheHMC-ALH369amplifierdieisidealfori | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
VariableCapacitanceDiodeforVCO Features •LowcapacitanceandtobeusableatGHz. •Highcapacitanceratio.(n=2.3min) •Lowseriesresistance.(rs=0.5Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
VariableCapacitanceDiodeforVCO FEATURES •LowcapacitanceandtobeusableatGHz. •Highcapacitanceratio.(n=2.3min) •Lowseriesresistance.(rs=0.5Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
VariableCapacitanceDiodeforVCO Features •LowcapacitanceandtobeusableatGHz. •Highcapacitanceratio.(n=2.3min) •Lowseriesresistance.(rs=0.5Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
VariableCapacitanceDiodeforVCO Features •LowcapacitanceandtobeusableatGHz. •Highcapacitanceratio.(n=2.3min) •Lowseriesresistance.(rs=0.5Ωmax) •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
VariableCapacitanceDiodeforVCO | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
VariableCapacitanceDiodeforVCO Features ●LowcapacitanceandtobeusableatGHz. ●Highcapacitanceratio.(n=2.3min) ●Lowseriesresistance.(r=0.5Ωmax) ●SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
