CONTROL DEVICES - BEAMLEAD PIN DIODES

DESCRIPTION Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junc

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Microsemi

美高森美

CONTROL DEVICES - BEAMLEAD PIN DIODES

DESCRIPTION Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junc

文件：137.67 Kbytes 页数：2 Pages

Microsemi

美高森美

Beam Lead PIN Diodes for Broadband

Semiconductor mesa beam lead PIN diodes are designed for very low inductance low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters al

Microchip

微芯科技

5V VERY LOW DROP VOLTAGE REGULATOR

DESCRIPTION The L4945 is a monolithic integrated circuit in Versawatt package specially designed to provide a stabilized supply voltage for automotive and in dustrial electronic systems. Thanks to their very low voltage drop, in automotive applications the devices can work correctly even during

文件：43.68 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

文件：26.12 Kbytes 页数：2 Pages

NTE

Power MOSFET 30 V, 35 A, Single N?묬hannel, SO?? FL

文件：145.58 Kbytes 页数：7 Pages

ONSEMI

安森美半导体