| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LightDuty2-ElectrodeMiniatureGasDischargeTube | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
SLICprotectionforbothclassicalandnewnetworks | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
NPNEPITAXIALPLANARTYPE(forRFamplifiersonVHFbandMobileradioapplications) 2SC2053isasiliconNPNepitaxialplanartypetransistordesingedforRFamplifiersonVHFbandmobilearadioapplications. | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
HOOK-UPWIRE | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
MiniatureSnap-inPowerRockerSwitches | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
AutoWide,EDTV-IIIDDetection,ID-1Detection Description TheCXD2053AM/ASisanICwhichhasthethreefunctionsofidentifyingthewidevideo(autowide),detectingtheEDTV-IIID,anddetectingID-1(EIAJ,CPX1024)fromthevideosignal. Features •VideoaspectratioidentificationusedwithwideTVsisrealizedwithasinglechip. •I | SonySONY 索尼 | Sony | ||
AutoWide,EDTV-IIIDDetection,ID-1Detection Description TheCXD2053AM/ASisanICwhichhasthethreefunctionsofidentifyingthewidevideo(autowide),detectingtheEDTV-IIID,anddetectingID-1(EIAJ,CPX1024)fromthevideosignal. Features •VideoaspectratioidentificationusedwithwideTVsisrealizedwithasinglechip. •I | SonySONY 索尼 | Sony | ||
TransistorOutputRepeaterDIN-RailModelD2053M Generaldescription: D2000MseriesIntrinsicallySafeMultiplexingSystemconsistsofonetofour Analog-TemperatureMultiplexerunitsmodelD2010M,uptotwelveExpanderunits modelD2011M,oruptofourDigitalMultiplexerunitsmodelD2030M,mountedin HazardousArea/HazardousLocationsZon | GMIG.M. International Gm 国际公司 | GMI | ||
TransistorOutputRepeaterDIN-RailModelD2053M Generaldescription: D2000MseriesIntrinsicallySafeMultiplexingSystemconsistsofonetofour Analog-TemperatureMultiplexerunitsmodelD2010M,uptotwelveExpanderunits modelD2011M,oruptofourDigitalMultiplexerunitsmodelD2030M,mountedin HazardousArea/HazardousLocationsZon | GMIG.M. International Gm 国际公司 | GMI | ||
METALGATERFSILICONFET GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfrom1MHzto1GH | SEME-LAB Seme LAB | SEME-LAB | ||
HIGHPERFORMANCEFRACTIONAL-NSYNTHESIZERWITHINTEGRATEDRFMIXER | RFMD RF Micro Devices | RFMD | ||
HIGHPERFORMANCEFRACTIONAL-NSYNTHESIZERWITHINTEGRATEDRFMIXER | RFMD RF Micro Devices | RFMD | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET Features PCBFootprintof4mm2 LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaximumHeight TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET Features PCBFootprintof4mm2 LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaximumHeight TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Halogen-andAntimony-Free.“Green”Device(Note3) TheDMC2053UFDBQissuitableforautomotiveapplicationsrequiringspecificcha | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMC2053UVTQissuitableforautomotiveapplications requiringspecificchangecontrol | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET Features PCBFootprintof4mm2 LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaximumHeight TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i. | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •PCBFootprintof4mm2 •LowOn-Resistance •LowInputCapacitance •LowProfile,0.6mmMaximumHeight •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Halogen-andAntimony-Free.“Green”Device(Note3) •TheDMN2053UFDBQissuitableforautomotiveapplicationsrequirin | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2053UQissuitableforautomotiveapplications requiringspecificch | DIODESDiodes Incorporated 达尔科技 | DIODES |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
格科微传感器 |
21+ |
GSP |
20000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
GALAXYCORE |
23+ |
CSP |
21000 |
原厂原标正品假一罚十 |
询价 | ||
GALAXYCORE/格科微 |
2021 |
SOP-4 |
363 |
GALAXYCORE/格科微 GC2053 SOP-4 2021 |
询价 | ||
GC/格科微 |
21+ROHS |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
GALAXYCORE |
22+ |
CSP |
22693 |
询价 | |||
格科威 |
21+ |
CSP |
48000 |
原包装原标现货,假一罚十, |
询价 | ||
GC/格科微 |
21+ |
CSP-47 |
200 |
原装现货 |
询价 | ||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
GC |
2335 |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
询价 | ||
格科微 |
22+ |
CSP |
5000 |
格科微CIS产品全系列在售 |
询价 |
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