丝印：GC2；Package：VSSOP(DGK)；LM4910 Output Capacitor-less Stereo 35mW Headphone Amplifier

1FEATURES 2• Eliminates headphone amplifier output coupling capacitors • Eliminates half-supply bypass capacitor • Advanced pop & click circuitry eliminates noises during turn-on and turn-off • Ultra-low current shutdown mode • Unity-gain stable • 2.2V - 5.5V operation • Available in spac

文件：1.31359 Mbytes 页数：31 Pages

TI

德州仪器

丝印：GC2；Package：VSSOP(DGK)；LM4910 Output Capacitor-less Stereo 35mW Headphone Amplifier

1FEATURES 2• Eliminates headphone amplifier output coupling capacitors • Eliminates half-supply bypass capacitor • Advanced pop & click circuitry eliminates noises during turn-on and turn-off • Ultra-low current shutdown mode • Unity-gain stable • 2.2V - 5.5V operation • Available in spac

文件：1.31359 Mbytes 页数：31 Pages

TI

德州仪器

丝印：GC20N60；Package：TO-220F；Power Factor Correction (PFC)

Description The GC20N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：2.51102 Mbytes 页数：8 Pages

GOFORD

谷峰半导体

丝印：GC20N60；Package：TO-252；Power Factor Correction (PFC)

Description The GC20N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：2.51102 Mbytes 页数：8 Pages

GOFORD

谷峰半导体

丝印：GC20N60；Package：TO-220；Power Factor Correction (PFC)

Description The GC20N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：2.51102 Mbytes 页数：8 Pages

GOFORD

谷峰半导体

丝印：GC20N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：754.46 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC20N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65FA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.12265 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC20N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65FD uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：795.14 Kbytes 页数：7 Pages

GOFORD

谷峰半导体

丝印：GC20N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.18706 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC20N65；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.8 Kbytes 页数：6 Pages

GOFORD

谷峰半导体