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FSL13A0D	文件：71.78 Kbytes Page：8 Pages	9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K	Intersil Intersil Corporation	Intersil
FSL13A0R	文件：71.78 Kbytes Page：8 Pages	9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K	Intersil Intersil Corporation	Intersil
FSS13A0D	文件：71.31 Kbytes Page：8 Pages	2A,100V,0.170Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	Intersil Intersil Corporation	Intersil
FSS13A0R	文件：71.31 Kbytes Page：8 Pages	2A,100V,0.170Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	Intersil Intersil Corporation	Intersil
FSYE13A0D	文件：55.68 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K	Intersil Intersil Corporation	Intersil
FSYE13A0R	文件：55.68 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K	Intersil Intersil Corporation	Intersil
LWTN-13A0	文件：146.39 Kbytes Page：5 Pages	PowerTransducerSeriesL-UNIT	MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司	MSYSTEM
LWTN-13A0SLASHQ	文件：146.39 Kbytes Page：5 Pages	PowerTransducerSeriesL-UNIT	MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司	MSYSTEM

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