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GA1L3N

MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR?

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTOR

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

GA1L3N

SILICON TRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

AA1L3M

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithAN1L3M

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AA1L3M

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithAN1L3M

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

AA1L3N

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithAN1L3N

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

AA1L3N

On-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithAN1L3N

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AA1L3Z

NPNSILICONTRANSISTOR

DESCRIPTION TheAA1L3Zisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AB1L3N

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •Currentdriveavailableupto0.7A •On-chipbiasresistor •Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

ADSP-H1L3

1.0??SingleDigitPCBBasedLEDDisplay

AVAGOAvago

安华高安华高科技

AN1L3M

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithAA1L3M

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

AN1L3M

on-chipresistorPNPsiliconepitaxialtransistor

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithAA1L3M

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AN1L3N

on-chipresistorPNPsiliconepitaxialtransistor

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithAA1L3N

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AN1L3N

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithAA1L3N

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

AN1L3Z

PNPSILICONTRANSISTOR

DESCRIPTION TheAN1L3Zisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AP1L3N

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •Currentdriveavailableupto0.7A •On-chipbiasresistor •Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AR1L3N

on-chipresistorPNPsiliconepitaxialtransistor

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •HighcurrentdrivessuchasICoutputandactuatoravailable •On-chipbiasresistor •Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

BA1L3M

On-chipresistorNPNSiliconEpitaxialTransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithBN1L3M

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

BA1L3M

CMPOUNDTRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BA1L3N

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithBN1L3N

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BA1L3N

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithBN1L3N

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

晶体管资料

  • 型号:

    GA1L3N

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+R

  • 性质:

    中速 (MS)_开关管 (SW)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    DTC143XU,

  • 最大耗散功率:

    0.15W

  • 放大倍数:

  • 图片代号:

    H-15

  • vtest:

    60

  • htest:

    999900

  • atest:

    .1

  • wtest:

    .15

供应商型号品牌批号封装库存备注价格
NEC
2017+
SOT-323SC-70
56787
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
NEC
13+
SOT-323
7500
特价热销现货库存
询价
NEC
2008++
SOT-323
63500
新进库存/原装
询价
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
NEC
22+23+
Sot-323
29924
绝对原装正品全新进口深圳现货
询价
23+
N/A
35700
正品授权货源可靠
询价
NEC
1928+
SOT323
51500
NEC专营!正规代理,错过是损失!
询价
原装NEC
2023+
SOT-323
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
NEC
23+
SOT-323
19700
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
原装NEC
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
更多GA1L3N供应商 更新时间2024-4-26 9:52:00