PNP EPITAXIAL TRANSISTOR

Description The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features * High Collector current (IC: 1.5A) * Complementary to G8050

文件：136.54 Kbytes 页数：2 Pages

GTM

勤益投资控股

The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation

文件：138.47 Kbytes 页数：2 Pages

ETL

亚历电子

PNP EPITAXIAL TRANSISTOR

Description\nThe G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. * High Collector current (IC: 1.5A)\n* Complementary to G8050 ;

GTM

勤益投资控股

PNP EPITAXIAL PLANAR TRANSISTOR

Description The G8550S is designed for general purpose amplifier applications. Features * High DC Current gain: 100-500 at IC= 150mA * Complementary to G8050S

文件：174.59 Kbytes 页数：3 Pages

GTM

勤益投资控股

The G8550S is designed for general purpose amplifier applications

文件：177.34 Kbytes 页数：3 Pages

ETL

亚历电子