首页 >G7811F>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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GaAsHyperabruptJunctionVaractorDiodes | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | SKYWORKS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
3-TERMINALFIXEDVOLTAGEREGULATOR | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | Huashan | ||
SynchronousBuckController GENERALDESCRIPTION TheADP1878/ADP1879areversatilecurrent-mode,synchronousstep-downcontrollers.Theyprovidesuperiortransientresponse,optimalstability,andcurrent-limitprotectionbyusingaconstantontime,pseudofixedfrequencywithaprogrammablecurrent-limit,currentcontrols | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
N-ChannelApplication-SpecificMOSFETs | IRF International Rectifier | IRF | ||
ChipsetforDC-DCConverters Description ThesenewdevicesemployadvancedHEXFET®PowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakethemidealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationofmicroprocessor | IRF International Rectifier | IRF | ||
PROVISIONALDATASHEET Applications •HighFrequencySynchronousBuckConvertersforComputerProcessorPower •HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse •100RGTested Benefits •VeryLowRDS(on)at4.5VVGS •Ultra-LowGateImpedance | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom | IRF International Rectifier | IRF | ||
PROVISIONALDATASHEET Applications •HighFrequencySynchronousBuckConvertersforComputerProcessorPower •HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse •100RGTested Benefits •VeryLowRDS(on)at4.5VVGS •Ultra-LowGateImpedance | IRF International Rectifier | IRF | ||
N-ChannelApplication-SpecificMOSFETs Description ThisnewdeviceemploysadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakeitidealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationofmicroprocessors. Th | IRF International Rectifier | IRF |
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