丝印：G75P04；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G75P04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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谷峰半导体

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

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MOS FIELD EFFECT TRANSISTOR

Description The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) ⎯ RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A) • Logic level drive type • Gat

文件：243.96 Kbytes 页数：8 Pages

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40V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-20A

文件：436.76 Kbytes 页数：6 Pages

PANJIT

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