零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-pack | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=1.6V@IC=39A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-247ADpackage •Lead-Free Benefits • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FastSpeedIGBT-INSULATEDGATEBIPOLARTRANSISTOR FastSpeedIGBT INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
IGBT DESCRIPTION ·LowGateDriveRequirement ·HighCurrentHandlingCapability ·ShortCircuitCapability ·HighPowerDensity APPLICATIONS ·PowerInverters ·MotorDrives ·UPS,PFC ·HighVoltageAuxiliaries | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.84V,@Vge=15V,Ic=30A) Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerat | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
21+ROHS |
TO-247 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
22+ |
TO-247 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-247 |
8000 |
只做原装现货 |
询价 | ||
IR |
02+ |
TO-3P |
1 |
询价 | |||
IR |
23+ |
TO3P |
7635 |
全新原装优势 |
询价 | ||
IR |
20+ |
TO-247 |
65300 |
一级代理/放心购买! |
询价 | ||
IR |
2022+ |
TO-247 |
7300 |
原装现货 |
询价 | ||
IR |
23+ |
TO-247 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
管3P |
18000 |
询价 | |||
IR |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 |
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