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HGTH20N50E1

15A,20A,400Vand500VN-ChannelIGBTs

Description TheHGTH20N40C1,HGTH20N40E1,HGTH20N50C1,HGTH20N50E1,HGTP15N40C1,HGTP15N40E1,HGTP15N50C1andHGTP15N50E1aren-channelenhancement-modeinsulatedgatebipolartransistors(IGBTs)designedforhigh-voltage,lowon-dissipationapplicationssuchasswitchingregulatorsandmotordri

Intersil

Intersil Corporation

HGTH20N50E1D

20A,400Vand500VN-ChannelIGBTswithAnti-ParallelUltrafastDiodes

Description TheHGTH20N40C1D,HGTH20N40E1D,HGTH20N50C1D,andHGTH20N50E1Daren-channelenhancement-modeinsulatedgatebipolartransistors(IGBTs)designedforhighvoltage,lowon-dissipationapplicationssuchasswitchingregulatorsandmotordrivers.Theyfeatureadiscreteantiparalleldiod

Intersil

Intersil Corporation

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