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G20N120

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

63A, 1200V, NPT Series N-Channel IGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

34A, 1200V N-Channel IGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N60B3

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N60B3D

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N60C3

45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N60HS

High Speed IGBT in NPT-technology

HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers:   -parallelswitchingcapability   -moderateEoffincreasewithtemperature   -

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

G20N50C

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

G20N60

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    G20N

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
门市
21+ROHS
33
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HARRIS
99+
TO-3P
76
询价
哈里斯
06+
TO-247
3500
原装
询价
FSC
1746+
TO247
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
23+
TO-3P
65480
询价
IR
2023+
TO-247
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
HARRIS/哈里斯
23+
TO-3P
90000
只做原厂渠道价格优势可提供技术支持
询价
台产
TO-247
265209
假一罚十原包原标签常备现货!
询价
FAIRCHILD/仙童
23+
TO-3P
10000
公司只做原装正品
询价
更多G20N供应商 更新时间2024-6-25 9:49:00