General Purpose, Low Voltage Comparator with Open-Drain Output

文件：106.86 Kbytes 页数：1 Pages

GMT

致新科技

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor • Low-Noise, High Gain Amplifier

文件：62.21 Kbytes 页数：1 Pages

InterFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 13.9A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.13Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and SMPS.

文件：318.04 Kbytes 页数：2 Pages

ISC

无锡固电

Stacked Chip 16M Flash Memory and 4M SRAM

DESCRIPTION The LRS1331 is a combination memory organized as 1,048,576 × 16-bit flash memory and 262,144 × 16-bit static RAM in one package. FEATURES • Flash Memory and SRAM • Stacked Die Chip Scale Package • 72-ball 8 mm × 11 mm CSP plastic package • Power supply: 2.7 V to 3.6 V • Operatin

文件：216.7 Kbytes 页数：26 Pages

SHARPSharp Corporation

夏普