Fast IGBT in NPT-technology

* 75% lower Eoffcompared to previous generation combined with low conduction losses\n* Short circuit withstand time – 10 µs\n* Designed for:\n  - Motor controls\n  - Inverter\n* NPT-Technology for 600V applications offers:\n   - very tight parameter distribution\n   - high ruggedness, temperatur

Infineon

英飞凌

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

文件：60.85 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

文件：60.85 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

文件：60.85 Kbytes 页数：5 Pages

HSMC

华昕