丝印：FZT692B；Package：SOT223；70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Features  BVCEO > 70V  BVCBO > 70V  IC = 2A High Continuous Current  hFE > 400 for High Gain @ 0.5A  Complementary PNP Type: FZT792A  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The FZT692BQ is suitable for automotive applicat

文件：865.25 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：FZT1048A；Package：SOT-223；17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR

文件：676.96 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：FZT957；Package：SOT-23；PNP MEDIUM POWER TRANSISTOR

文件：827.4 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：FZT957；Package：SOT-23；PNP MEDIUM POWER TRANSISTOR

文件：827.4 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：FZT957；Package：SOT-23；PNP MEDIUM POWER TRANSISTOR

文件：827.4 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：FZT958；Package：SOT-223；400V PNP MEDIUM POWER TRANSISTOR

文件：716.77 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN Silicon Planar Medium Power High Gain Transistor

Features ● VCEO = 10V. ● 5 Amp continuous current. ● 20 Amp pulse current. ● Low saturation voltage. ● High gain. ● Extremely low equivalent on-resistance; RCE(sat) = 44mΩ at 5A.

文件：38.35 Kbytes 页数：2 Pages

KEXIN

科信电子

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 10V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 44mΩ at 5A

文件：120.38 Kbytes 页数：4 Pages

Zetex

SOT223 NPN SILICON PLANAR

Features ● BVCEO > 10V ● IC = 5A High Continuous Collector Current ● ICM = 20A Peak Pulse Current ● Low Saturation Voltage VCE(sat)

文件：131.99 Kbytes 页数：4 Pages

DIODES

美台半导体

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 17.5V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A

文件：132.01 Kbytes 页数：3 Pages

Zetex