SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

文件：221.12 Kbytes 页数：9 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

文件：220.2 Kbytes 页数：9 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features • Electrical features - VCES = 4500 V - IC nom = 1000 A / ICRM = 2000 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for incre

文件：532.59 Kbytes 页数：15 Pages

Infineon

英飞凌

Highly insulated module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

Features • Electrical features - VCES = 6500 V - IC nom = 1000 A / ICRM = 2000 A - Low VCE,sat • Mechanical features - Extended storage temperature down to Tstg = -55 °C - Package with enhanced insulation of 10.4 kV AC 60 s - High creepage and clearance distances - Package with CTI > 600

文件：748.66 Kbytes 页数：15 Pages

Infineon

英飞凌

IGBT High-Power Module

文件：365.7 Kbytes 页数：4 Pages

eupec

IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled3 diode

文件：468.06 Kbytes 页数：9 Pages

Infineon

英飞凌

IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled3 diode

文件：471.14 Kbytes 页数：9 Pages

Infineon

英飞凌

IGBT High-Power Module

文件：365.7 Kbytes 页数：4 Pages

eupec

IGBT模块

IHV B 3300 V, 1000 A 130 mm single-switch IGBT Module with TRENCHSTOP™ IGBT 3 and Emitter Controlled diode - The experienced solution for traction and industry applications.\n Also available as soft switching, low loss device: FZ1000R33HL3 • High DC stability\n• High short circuit capability\n• Self limiting short curcuit current\n• Unbeatable robustness\n• Tvj op = 150°C\n• Low VCEsat with positive temperature coefficient\n• AlSiC base plate for increased thermal cycling capability\n• Package with CTI > 600\n• Isolated base plate\n\n;

Infineon

英飞凌

3300 V、1000 A 单开关 IGBT 模块

IHV B 3300 V, 1000 A 130 mm single-switch IGBT Module with TRENCHSTOP™ IGBT 3, low switching losses and Emitter Controlled diode - The experienced solution for traction and industry applications.\n Also available as fast switching device: FZ1000R33HE3 • High DC stability\n• High short circuit capability\n• Self limiting short circuit current\n• Low switching losses\n• Unbeatable robustness\n• Tvj op = 150°C\n• Low VCEsat with positive temperature coefficient\n• AlSiC base plate for increased thermal cycling capability\n• Package with CTI > 600\n•;

Infineon

英飞凌