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FSF250D1	文件：45.24 Kbytes Page：8 Pages	24A,200V,0.110Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSYA250D1	文件：46.22 Kbytes Page：8 Pages	27A,200V,0.100Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil

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FSF250D1

文件：45.24 Kbytes

Page：8 Pages

24A,200V,0.110Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

Intersil

FSYA250D1

文件：46.22 Kbytes

Page：8 Pages

27A,200V,0.100Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Intersil

Intersil Corporation

Intersil

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