零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-4.3A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-4.4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-13.5A,RDS(ON)=86mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=125mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT4.3Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
P-channelandN-channelComplementaryMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-channelandP-channelComplementaryMOSFETS | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
NandP-ChannelEnhancementModePowerMOSFET ProductSummary N-Channel Vps=30V,Ip=4A Ros(on)30mQ@Ves=10V(Typ) Ros(on)50mQ@Ves=-4.5V(Typ) P-Channel Vos=-30V,Ip=3A Ros(on)45mQ@Ves=-10V(Typ) Rosion)85mQ@Ves=-4.5V(Typ) | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
CalibrationandAdjustmentSoftwareforAgilentRF/WInstruments | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
N-ChannelPowerMOSFET Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Lithium-ionbatterycharginganddischargingswitch Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
N-ChannelPowerMOSFET Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
USBDedicatedChargingPortControllerforFastChargingProtocolandQC2.0/3.0 | FITIPOWERFitipower Integrated Technology Inc. 天鈺科技天鈺科技股份有限公司 | FITIPOWER | ||
Synchronous-RectifiedBuckMOSFETDrivers | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FIRSTSILICON |
21+ROHS |
SOP-8 |
69000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FS |
24+25+/26+27+ |
SOP-8.贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
FS |
2022+ |
SOT-223 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
FS |
2022+ |
SOT-223 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
FS |
20+ |
SOT-223 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
FS |
23+ |
SOT-23 |
63000 |
原装正品现货 |
询价 | ||
FS |
23+ |
12000 |
询价 | ||||
FS |
18+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
FIRSTSILI |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
SXSEMI |
23+ |
SOT523 |
900000 |
原装进口特价 |
询价 |
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