2P03

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitches

■Features ●Externaldimensions:6.0mm6.1mm,Height5.0mm (Includingthepushplate) ●Steadyandlowcontactresistance(100mΩmax.) ●Excellentsolderability(J-bent-typeterminals) ■RecommendedApplications ●Carelectronicsequipment

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitches

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitchesOverstroketravel

■Features ●Externaldimensions:6.5mmX6.0mm,Height1.8mm (Excludingthepushplate) ●Withorwithoutgroundterminal,height,operatingforce ●Overstroketravel ■RecommendedApplications ●Operatingswitchesforotherelectronicequip

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitches

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitches

GV2P03

TeSysDecaManualStarterandProtector,thermalmagneticcircuitprotector,rotaryhandle,0.25??.40A,screwclampterminals

Main RangeofProductTeSysGV2 RangeTeSys TeSysDeca DeviceshortnameGV2P ProductnameTeSysGV2 TeSysDeca ProductorComponentTypeCircuitbreaker DeviceApplicationMotor TripunittechnologyThermal-magnetic

GV2P03

ManualMotorStarters,Controllers,andProtectorsTypeGV2,GV3,andGV7

StandardFeatures TheGVfamilyofferssuchstandardfeaturesas: •ULListed,CSACertified,andCEMarked •ULListedforGroupMotorApplications(formoredetailsseepage7) •Overloadrelay —Class10,ambientcompensated(GV2,GV3) —Class10,solidstate(GV7) •Singlephasesensiti

MMDF2P03HD

PowerMOSFET2Amps,30VoltsP?묬hannelSO??,Dual

MTSF2P03HD

P?묬hannelPowerMOSFET

MTSF2P03HD

SINGLETMOSPOWERMOSFET2.7AMPERES30VOLTSRDS(on)=0.090OHM

MediumPowerSurfaceMountProducts TMOSSingleP-ChannelFieldEffectTransistor Micro8™devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocesstoachievelowestpossibleon–resistancepersiliconarea.Theyarecapableofwithstandinghighene

RFT2P03L

2.1A,30V,0.150Ohm,P-ChannelLogicLevel,PowerMOSFET

ThisproductisaP-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulator

RT2P03M

COMPOSITETRANSISTORWITHRESISTORFORSWITCHINGAPPLICATIONSILICONPNPEPITAXIALTYPE

DESCRIPTION RT2P03Misacompositetransistorwithbuilt-inbiasresistor FEATURE ●Built-inbiasresistor(R1=10KΩ,R2=10KΩ) ●Minipackageforeasymounting APPLICATION Invertedcircuit,switchingcircuit,interfacecircuit,drivercircuit

SDT2P03-C

Dual-PEnhancementModeMOSFET