Insulated Logic Level TRIACs

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High voltage reisistor

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N-channel MOSFET 60 V, 120 A, 3.0 mΩ

Features • Low on-state resistance : RDS(on) = 3.0 mΩ max. ( VGS = 10 V, ID = 60 A ) • Low Ciss : Ciss = 11300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±120 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：704.93 Kbytes 页数：7 Pages

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Silicon P Channel MOS FET Series Power Switching

文件：90.56 Kbytes 页数：7 Pages

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