FSPYC260R规格书供应代理飞特帝亚Intersil-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FSPYC260R	文件：83.67 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：83.67 Kbytes 页数：8 Pages	Intersil	Intersil
FSPYC260R3	文件：83.67 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：83.67 Kbytes 页数：8 Pages	Intersil	Intersil
FSPYC260R4	文件：83.67 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：83.67 Kbytes 页数：8 Pages	Intersil	Intersil
FSYC260D	文件：48.83 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi 文件：48.83 Kbytes 页数：8 Pages	Intersil	Intersil
FSYC260R	文件：48.83 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi 文件：48.83 Kbytes 页数：8 Pages	Intersil	Intersil
FT260	文件：2.30316 Mbytes Page：58 Pages	Future Technology Devices International Ltd. 文件：2.30316 Mbytes 页数：58 Pages	FTDI 飞特帝亚	FTDI

详细参数

型号：
FSPYC260R
制造商：
INTERSIL
制造商全称：
Intersil Corporation
功能描述：
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	FSPYC260R4	ISL	05+	原厂原装	4300	只做全新原装真实现货供应	询价
深圳市赛尔通科技有限公司	FSPYC260R4	ISL	23+		65480		询价
深圳市凌旭科技有限公司	FSQ0165R	FSC	2016+	DIP8	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市鹏和科技有限公司	FSQ0165R	FSC	24+	DIP8	5000	只做原装公司现货	询价
深圳市毅创弘电子科技有限公司	FSQ0165R	FAIRCHILD	24+	DIP-8	66800	原厂授权一级代理,专注汽车、医疗、工业、新能源！	询价
深圳市亿智腾科技有限公司	FSQ0165R		24+	DIP-8	6430	原装现货/欢迎来电咨询	询价
瀚佳科技(深圳)有限公司	FSQ0165R	FSC	24+	DIP8	65200	一级代理/放心采购	询价
深圳市威尔健半导体有限公司	FSQ0165R	FAIRCHILD/仙童	23+	DIP8	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	FSQ0165R	DIP8	23+	FAIRCHILD	50000	全新原装正品现货,支持订货	询价
深圳市胜彬电子有限公司	FSQ0165R	FAIRCILD	22+	DIP-8	8000	原装正品支持实单	询价

更多FSPYC260R供应商更新时间2025-10-5 9:16:00

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