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FSPYC260F

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260F3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260F4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSYC260D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FT260

FutureTechnologyDevicesInternationalLtd.

FTDIFuture Technology Devices International Ltd.

飞特帝亚英商飞特帝亚有限公司

FT260Q

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飞特帝亚英商飞特帝亚有限公司

FT260Q-R

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飞特帝亚英商飞特帝亚有限公司

FT260Q-x

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飞特帝亚英商飞特帝亚有限公司

详细参数

  • 型号:

    FSPYC260F

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

供应商型号品牌批号封装库存备注价格
ISL
05+
原厂原装
4300
只做全新原装真实现货供应
询价
ISL
23+
65480
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC
2016+
DIP8
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
FSC
24+
DIP8
5000
只做原装公司现货
询价
FSC
1822+
DIP8
6852
只做原装正品假一赔十为客户做到零风险!!
询价
FAIRCHILD
24+
DIP-8
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
询价
24+
DIP-8
6430
原装现货/欢迎来电咨询
询价
FSC
24+
DIP8
65200
一级代理/放心采购
询价
FAIRCHILD/仙童
23+
DIP8
50000
全新原装正品现货,支持订货
询价
更多FSPYC260F供应商 更新时间2025-7-25 15:07:00