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FSL13

Surface Mount Schottky Rectifier

文件:390.91 Kbytes 页数:4 Pages

Good-Ark

固锝电子

FSL136HR

丝印:FSL136HR;Package:DIP;Green Mode Power Switch

文件:565.09 Kbytes 页数:15 Pages

ONSEMI

安森美半导体

FSL136HRL

丝印:FSL136HR;Package:LSOP;Green Mode Power Switch

文件:565.09 Kbytes 页数:15 Pages

ONSEMI

安森美半导体

FSL136HRLX

丝印:FSL136HR;Package:LSOP;Green Mode Power Switch

文件:565.09 Kbytes 页数:15 Pages

ONSEMI

安森美半导体

FSL136MR

丝印:FSL136MR;Package:DIP;Green Mode Power Switch

文件:408.79 Kbytes 页数:13 Pages

ONSEMI

安森美半导体

FSL130D

8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件:45.97 Kbytes 页数:8 Pages

Intersil

FSL130D1

8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件:45.97 Kbytes 页数:8 Pages

Intersil

FSL130D3

8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件:45.97 Kbytes 页数:8 Pages

Intersil

FSL130R

8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件:45.97 Kbytes 页数:8 Pages

Intersil

FSL130R1

8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件:45.97 Kbytes 页数:8 Pages

Intersil

技术参数

  • Package:

    eSGA (SOD-123FL)

  • Status:

    Active

  • VRRM(V):

    30

  • IF(AV)(A):

    1

  • IFSM(A):

    40

  • VF(V):

    0.42

  • IR(mA):

    0.5

  • TJ (Max)(ºC):

    125

供应商型号品牌批号封装库存备注价格
ISL
05+
原厂原装
4283
只做全新原装真实现货供应
询价
Fairchild
24+
DIP-8
5645
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
FAI
25+
DIP8
600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
仙童
17+
NA
6200
100%原装正品现货
询价
FAIRCHILD
24+
SMD
12000
原厂/代理渠道价格优势
询价
FAIRCHI
23+
DIP8
8650
受权代理!全新原装现货特价热卖!
询价
Fairchi
23+
NA
10726
专做原装正品,假一罚百!
询价
FAI
25+23+
DIP
28231
绝对原装正品全新进口深圳现货
询价
FAIRCHILD
18+
DIP8
85600
保证进口原装可开17%增值税发票
询价
ONSemiconductor
24+
8-DIP
90000
原厂正规渠道、保证进口原装现货假一罚十价格合理
询价
更多FSL13供应商 更新时间2025-11-23 9:17:00